增塑的PVC涂膜压电晶体传感器阵列用作香味传感系统

增塑的ＰＶＣ涂膜压电晶体传感器阵列用作香味传感系统曹忠，林辉概，王彬锋，王柯敏，陈泽忠，俞汝勤（湖南大学化学化工系，长沙，４１００８２）关键词阵列，压电晶体传感器，增塑的ＰＶＣ涂膜，香味传感系统吸附活性物质如类脂化合物等涂膜的压电晶体传感器（ＰＣＳ）...     

The effect of exchange in autoionization processes

The effect of including distortion (with and without exchange) in the wavefunction for the continuum electron while calculating the probability of autoionization of 2s ^{2 1} S. 2s2p ^1,3 P, 2p ^{2 1} D and 2p ^{2 1} S states of He and Li⁺ has been studied.     

Using Carrier Fringes to Study the High Temperature Deformation Behavior of a BGA Package Under Extended Dwell Times

There is a compelling need to experimentally understand solder joint deformation behavior at high temperatures over an extended period of time. Accordingly, the deformation behavior of solder joints in a Ceramic Ball Grid Array (CBGA) package mounted on an organic FR4 board under extended dwell time at a high temperature has been studied using laser moiré interferometry. The warpage and the in-plane horizontal deformation of the ceramic substrate and the organic board as a function of time were determined. The variation of the normal strains and shear strains in the solder joints with time were also investigated. It was found that increased sensitivity was necessary to accurately determine the strains in the small sized solder joints. A new method utilizing carrier fringes to increase the sensitivity of the moiré interferometry system is proposed and has been used to determine the strains in the small sized solder joints. Increased sensitivity can be obtained merely by changing the incident angle of the laser light on the surface of the specimen, thereby making it unnecessary to use expensive phase shifting apparatus with the traditional laser moiré system.     

一种网格参数化的优化算法

网格参数化是数字几何处理(Digital Geometry Processing)中的一个基本问题.作者利用Floater的具有保形权或均值权的凸线性组合参数化引入一种新的参数化的扭曲度量--点密度,以及网格上的最短切割路径来优化原来的参数化.切割路径由网格上的一内点和网格上的一边界点连接而成,内点位于参数区域上最密集区域,也是扭曲最严重的区域.具有最短切割路径的网格模型,被重新参数化成为一个具有较小扭曲的参数化.最后给出实例说明了此方法是可行和有效的,并且是优于原来的参数化的.     

激光器非线性失真对SCM光波系统的影响

对于宽带副载波复用(SCM)的光波系统,研究并设法减小光源的非线性所引起的谐波失真和交调失真,是一个重要的理论课题。本文分析激光器的P—I曲线的非线性以及谐振腔里光子和电子相互耦合所引起的固有非线性及其对复用信道的影响。     

TDI CCD立体相机内方位元素测试技术研究

依据星载单镜头TDICCD立体相机立体成像及测绘要求,结合普通测绘相机内方位元素,提出了星载单镜头立体相机内方位元素由焦距、主点位置、立体成像角(前后视交角)、图像畸变等元素组成。给出了立体相机内方位元素测试的方法,针对立体相机成像特点给出了计算内方位元素的算法,对其进行了实际测量和验证,其测量结果符合设计要求。     

Study of depth-dependent tetragonal distortion of quaternary AIInGaN epilayer by Rutherford backscattering/channeling

<正>A 240-nm thick Al_0.4In_0.02Ga_0.58N layer is grown by metal organic chemical vapour deposition,with an over 1-μm thick GaN layer used as a buffer layer on a substrate of sapphire（0001）.Rutherford backscattering and channeling are used to characterize the microstructure of AlInGaN.The results show a good crystalline quality of AlInGaN(x_min= 1.5%) with GaN buffer layer.The channeling angular scan around an off-normal（1213） axis in the {1010} plane of the AlInGaN layer is used to determine tetragonal distortion e_T,which is caused by the elastic strain in the AlInGaN.The resulting AlInGaN is subjected to an elastic strain at interfacial layer,and the strain decreases gradually towards the near-surface layer.It is expected that an epitaxial AlInGaN thin film with a thickness of 850 nm will be fully relaxed （e_T=0）.     

Theoretical studies of the optical and EPR spectra for Fe ion in the MF3:Fe (M=Al, Ga) systems

By analyzing the EPR spectra of Fe³⁺ ion in the fluorinde glasses, the local lattice structures around impurity Fe³⁺ ion in MF₃:Fe³⁺ (M=Al, Ga) systems have been studied by means of diagonalizing the complete energy matrices of the electron-electron repulsion, the ligand-field and the spin-orbit coupling for a d⁵ configuration ion in a trigonal ligand-field. Both the second-order and fourth-order EPR parameters D and (a−F) are taken simultaneously in the structural investigation. The results indicate that the local lattice structure around octahedral Fe³⁺ center has an expansion distortion for Fe³⁺ in MF₃:Fe³⁺ (M=Al, Ga). The expansion distortion may be ascribed to the fact that the radius of Fe³⁺ ion is larger than that of Al³⁺ ion and Ga³⁺ ion, and the Fe³⁺ ion will push the fluoride ligands upwards and downwards, respectively. The local lattice structure parameters R=1.927 A, θ=55.538° for Fe³⁺ in AlF₃:Fe³⁺ and R=1.931 A, θ=56.09° for Fe³⁺ in GaF₃:Fe³⁺ are determined, respectively, and the EPR spectra of the MF₃:Fe³⁺ (M=Al, Ga) systems are satisfactorily explained.